Ultrasensitive detection of cadmium ions using a microcantilever-based piezoresistive sensor for groundwater

• Dinesh Rotake,
• Anand Darji and
• Nitin Kale

Beilstein J. Nanotechnol. 2020, 11, 1242–1253, doi:10.3762/bjnano.11.108

• . It was calibrated using atomic force microscopy (AFM) [40]. The process begins with thermal oxidation of Si at 1000 °C using an oxidation furnace to obtain a thermally grown SiO2 layer followed by masking and etching to get the desired pattern. The polysilicon is deposited in a low-pressure chemical

• vapor deposition (LPCVD) furnace at 630 °C and boron doping (1018 per cm3) is carried out using ion implantation at 35 keV. The upper SiO2 layer is formed by re-oxidizing the polysilicon in an oxidation furnace [40]. The stiffness (k) of the fabricated piezoresistive sensor measured using AFM is 131–146

Integrated photonics multi-waveguide devices for optical trapping and Raman spectroscopy: design, fabrication and performance demonstration

• Gyllion B. Loozen,
• Arnica Karuna,
• Mohammad M. R. Fanood,
• Erik Schreuder and
• Jacob Caro

Beilstein J. Nanotechnol. 2020, 11, 829–842, doi:10.3762/bjnano.11.68

• waveguides is completely decoupled from the silicon substrate. Then, a 100 nm thick layer of Si3N4 is deposited using low pressure chemical vapor deposition (LPCVD, Figure 5b). This layer is patterned using optical lithography and reactive ion etching (RIE) in a fluorine-based plasma, which is followed by

Integration of sharp silicon nitride tips into high-speed SU8 cantilevers in a batch fabrication process

• Nahid Hosseini,
• Matthias Neuenschwander,
• Oliver Peric,
• Santiago H. Andany,
• Jonathan D. Adams and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2019, 10, 2357–2363, doi:10.3762/bjnano.10.226

• by low-pressure chemical vapor deposition. Circular openings (20 µm diameter) are then cut into the layer by electron-beam lithography. The LSNT mask is dry-etched before the moulds are structured by anisotropic KOH (40% at 60 °C) etching. The formation of {111} facets results in four-sided pyramidal

Features and advantages of flexible silicon nanowires for SERS applications

• Hrvoje Gebavi,
• Vlatko Gašparić,
• Dubravko Risović,
• Nikola Baran,
• Paweł Henryk Albrycht and
• Mile Ivanda

Beilstein J. Nanotechnol. 2019, 10, 725–734, doi:10.3762/bjnano.10.72

• commercially available substrates and that our intention is not to rate or evaluate, but rather the presentation of the first results. Experimental Horizontal silicon nanowires were fabricated by vapor–liquid–solid (VLS) synthesis in a low-pressure chemical vapor deposition (LPCVD) reactor as described in [23

Bi-layer sandwich film for antibacterial catheters

• Gerhard Franz,
• Florian Schamberger,
• Hamideh Heidari Zare,
• Sara Felicitas Bröskamp and
• Dieter Jocham

Beilstein J. Nanotechnol. 2017, 8, 1982–2001, doi:10.3762/bjnano.8.199

• parylene N (N denotes an unsubstituted benzene ring, in contrast to, e.g., PPX-C, which denotes a benzene ring with one Cl atom). PPX, a material with teflon-like properties, has been certified as harmless by the FDA. Poly(p-xylylene) PPX is deposited by low-pressure chemical vapor deposition (CVD) in a

Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

• Chin-Yi Tsai,
• Jyong-Di Lai,
• Shih-Wei Feng,
• Chien-Jung Huang,
• Chien-Hsun Chen,
• Fann-Wei Yang,
• Hsiang-Chen Wang and
• Li-Wei Tu

Beilstein J. Nanotechnol. 2017, 8, 1939–1945, doi:10.3762/bjnano.8.194

• and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C 10.3762/bjnano.8.194 Abstract In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition

• replacement for the metal contact in semiconductor devices. When applied to solar cells, it can eliminate the optical shading effect induced by the conventional metal contact thereby effectively increasing solar cell photocurrent and efficiency. Granular ZnO thin films grown by low pressure chemical vapor

• deposition (LPCVD) can act as good TCOs for thin film silicon solar cells [1][2][3][4][5][6][7][8][9][10]. This is mainly due to its high transparency over the visible and near-infrared (NIR) wavelength range, lower electrical resistivity (down to 1 × 10−3 Ω·cm), and the light-trapping capability due to its

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

• Kuang-Yang Kou,
• Yu-En Huang,
• Chien-Hsun Chen and
• Shih-Wei Feng

Beilstein J. Nanotechnol. 2016, 7, 75–80, doi:10.3762/bjnano.7.9

• resistance. These experimental results reveal the optical and material characteristics of the TCO layer, which could be useful for enhancing the performance of solar cells through an optimized TCO layer. Keywords: absorbance; low-pressure chemical vapor deposition; strain relaxation; transparent conductive

• meV), high thermal stability, high transparency, and high conduction, wurtzite ZnO is a very promising TCO material used for the front contact, barrier layer, and intermediate reflector in solar cells [1][2][3][4][5][6][7][8][9]. Low-pressure chemical vapor deposition (LPCVD) can be implemented to